Platinum gettering in silicon: precipitation of PtSi on diffusion induced dislocations and on SiP precipitates
Author:
Affiliation:
1. Laboratoire ‘MATériaux-Organisation-Propriétés’, Université Aix-Marseille III, France.
2. SGS-Thomson Microelectronics, Tours, France.
Publisher
Informa UK Limited
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/17432847.1995.11945565
Reference5 articles.
1. A. CORREIA, D. BALLUTAUD, and J. L. MAURICE:J. Appl. Phys., to be published.
2. W. SCHRÖTER, M. SEIBT, and D. GILLES: in ‘Material science and technology’, Vol. 4, (ed. R. W. Cahnet al.), 539; 1991, Weinheim/New York, UCH.
3. D. K. SADANA: in MRS Symp. Proc. ‘Impurity diffusion and gettering in silicon’, Vol. 36, (ed. R. B. Fairet al.), 246; 1985, Pittsburgh, PA, Materials Research Society.
4. NI. SEIBT: in MRS Symp. Proc. ‘Defect engineering in semiconductor growth, processing and device technology’, Vol. 262, 957; 1992, Pittsburgh, PA, Materials Research Society.
5. R. W. G. WYCKOFF: in ‘Crystal structures’, Vol. 1, Chap. 3, 16; 1963, New York, Wiley-Interscience.
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