1. [3] Bonafos C. , Alquier D. , Martinez A. , Mathiot D. , and Claverie A. , Nucl.Instr.Meth.B, (1995), in press
2. [14] This approximation holds after an initial transient τ of the order of τ ≅ d 2 /D 1 . During this transient SiI diffusion into the bulk will be of the same order of magnitude as transport into the bulk. At larger times the steeper concentration gradient towards the surface dominates. For typical values of d (≅ 100nnm) and DI (> 10−1 cm 2 /s)τ is less than 1s.
3. [11] The growth kinetis are valid for a plate-shaped precipitate of constant thickness which grows exclusively by incorporation of atoms via the bounding dislocation.