Titanium dioxide thin films for next-generation memory devices-Reference-Cited by-同舟云学术

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Titanium dioxide thin films for next-generation memory devices

Published:2012-07-19 Issue:3 Volume:28 Page:313-325
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Kim Seong Keun,Kim Kyung Min,Jeong Doo Seok,Jeon Woojin,Yoon Kyung Jean,Hwang Cheol Seong

Abstract

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference63 articles.

1. Liquid Injection Atomic Layer Deposition of Crystalline TiO[sub 2] Thin Films with a Smooth Morphology from Ti(O-i-Pr)[sub 2](DPM)[sub 2]

2. Growth Characteristics of Atomic Layer Deposited TiO[sub 2] Thin Films on Ru and Si Electrodes for Memory Capacitor Applications

3. Atomic layer deposition of TiO2 thin films from TiI4 and H2O

4. Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures

5. Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents

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