Growth Characteristics of Atomic Layer Deposited TiO[sub 2] Thin Films on Ru and Si Electrodes for Memory Capacitor Applications-Reference-Cited by-同舟云学术

Growth Characteristics of Atomic Layer Deposited TiO[sub 2] Thin Films on Ru and Si Electrodes for Memory Capacitor Applications

Published:2005 Issue:8 Volume:152 Page:C552
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kim Wan Don,Hwang Gyu Weon,Kwon Oh Seong,Kim Seong Keun,Cho Moonju,Jeong Doo Seok,Lee Sang Woon,Seo Min Ha,Hwang Cheol Seong,Min Yo-Sep,Cho Young Jin

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. International Technology Roadmap for Semiconductor2001, Semiconductor Industry Association , 〈http://public.itrs.net/〉

2. Metallorganic Chemical Vapor Deposition of Ru Films Using Cyclopentadienyl-Propylcyclopentadienylruthenium(II) and Oxygen

3. M. Hiratani, T. Hamada, S. Iijima, Y. Ohji, I. Asano, N. Nakanishi, and S. Kimura , inVLSI Technology 2001, Digest of Technical Papers, IEEE, p. 41 (2001).

Cited by 68 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystalline as-deposited TiO 2 anatase thin films grown from TDMAT and water using thermal atomic layer deposition with in situ layer-by-layer air annealing;Atomic Layer Deposition;2024-06-04

2. High-Temperature Atomic Layer Deposition of Rutile TiO₂ Films on RuO₂ Substrates: Interfacial Reactions and Dielectric Performance;Chemistry of Materials;2024-03-28

3. Role of a surface hydroxyl group depending on growth temperature in atomic layer deposition of ternary oxides;Journal of Vacuum Science & Technology A;2023-10-04

4. In Quest of Low‐Leakage Dynamic Random Access Memory Enabled by Doped TiO ₂ Dielectrics;Advanced Theory and Simulations;2022-12-04

5. MOx materials by ALD method;Metal Oxides for Non-volatile Memory;2022