Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference12 articles.
1. High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition
2. Impact of O3 feeding time on TiO2 films grown by atomic layer deposition for memory capacitor applications
3. Growth of High-Dielectric-Constant TiO[sub 2] Films in Capacitors with RuO[sub 2] Electrodes
4. Controlled growth of rutile TiO2 by atomic layer deposition on oxidized ruthenium
5. Plasma-Enhanced Atomic Layer Deposition of TiO[sub 2] and Al-Doped TiO[sub 2] Films Using N[sub 2]O and O[sub 2] Reactants
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1. In-situ crystallization of rutile-phased TiO2 via the template effect using MoO2 electrode for the metal-insulator-metal capacitor applications;Journal of Alloys and Compounds;2024-10
2. Atomic layer deposition of high-k and metal thin films for high-performance DRAM capacitors: A brief review;Current Applied Physics;2024-08
3. High-Temperature Atomic Layer Deposition of Rutile TiO2 Films on RuO2 Substrates: Interfacial Reactions and Dielectric Performance;Chemistry of Materials;2024-03-28
4. Nucleation and Layer Closure Behavior of Iridium Films Grown Using Atomic Layer Deposition;The Journal of Physical Chemistry Letters;2023-07-13
5. In Quest of Low‐Leakage Dynamic Random Access Memory Enabled by Doped TiO 2 Dielectrics;Advanced Theory and Simulations;2022-12-04
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