On temperature dependence of deformation mechanism and the brittle–ductile transition in semiconductors

Author:

Pirouz P.,Samant A. V.,Hong M. H.,Moulin A.,Kubin L. P.

Abstract

Recent deformation experiments on semiconductors have shown the occurrence of a break in the variation of the critical resolved shear stress of the crystal as a function of temperature. These and many other examples in the literature evidence a critical temperature at which a transition occurs in the deformation mechanism of the crystal. In this paper, the occurrence of a similar transition in two polytypes of SiC is reported and correlated to the microstructure of the deformed crystals investigated by transmission electron microscopy, which shows evidence for partial dislocations carrying the deformation at high stresses and low temperatures. Based on these results and data in the literature, the explanation is generalized to other semiconductors and a possible relationship to their brittle–ductile transition is proposed.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference73 articles.

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4. 69. Moulin A. , Etude de la Plasticité du Silicium à une Echelle Mésoscopique par Simulation Numérique Tridimensionnelle, Thèse de doctorate, Ecole Centrale de Paris, (1997).

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