Dislocation dissociation widths in silicon at low temperature under controlled high-stress orientations-Reference-Cited by-同舟云学术

Dislocation dissociation widths in silicon at low temperature under controlled high-stress orientations

Published:1989-03 Issue:3 Volume:59 Page:501-518
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Demenet J. L.,Grosbras P.,Garem H.,Desoyer J. C.

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/01418618908229781

Reference21 articles.

1. Alexander, H. 1984.Dislocations in Solids 1984, Edited by: Veyssière, P., Kubin, L. P. and Castaing, J. p. 283Meudon Bellevue: CNRS.

2. Alexander, H., Gottschalk, H. and Kisielowski-Kemmerich, C. 1985.Dislocations in Solids, Edited by: Suzuki, H., Ninomiya, T., Sumino, K. and Takeuchi, S. p. 337Tokyo: University of Tokyo Press.

3. Cockayne, D. J. H. 1970. Oxford Ph.D. Thesis

4. DISLOCATIONS IN SEMICONDUCTORS AS STUDIED BY WEAK-BEAM ELECTRON MICROSCOPY

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