A Rapid Specimen Preparation Technique For Cross-Section Tem Investigation Of Semiconductors and Metals-Reference-Cited by-同舟云学术

A Rapid Specimen Preparation Technique For Cross-Section Tem Investigation Of Semiconductors and Metals

Published:1987 Issue: Volume:115 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Vanhellemont J.,Bender H.,Rossou L.

Abstract

ABSTRACTA simple and rapid specimen preparation technique for the cross section TEM investigation of layered structures is discussed. Its wide applicability is illustrated for the investigation of processed silicon, compound semiconductors, silicon on quartz and also for metal/metal oxide interfaces.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference11 articles.

1. [11] Bender H. and Vanhellemont J. , to be published in Phys. Stat. Sol..

2. [8] Vanhellemont J. , Terrijn H. , Van Landuyt J. and Vereecken J. , Proc Kyoto (1986).

3. The preparation of transmission electron microscope specimens from compound semiconductors by ion milling

4. Advances in Transmission Electron Microscope Techniques Applied to Device Failure Analysis

5. Cross‐sectional specimens for transmission electron microscopy

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