Ion Milling of Compound Semiconductors for Transmission Electron Microscopy

Abstract

ABSTRACTSerious artefactual structures can be introduced into transmission electron microscope specimens of compound semiconductors when the latter are prepared by ion milling under non-optimum conditions. In the present investigations, the nature of these artefacts is characterised and results obtained using conventional argon ion milling are compared with those obtained using alternative ion species, including iodine ions. This work demonstrates the large improvement in specimen structural quality which can be achieved by combining a logical selection of ion species with a careful choice of milling conditions.