Author:
Bommannavar Arun S.,Sparks C. J.,Habenschuss A.,Ice G. E.,Dhere A.,Morkoc H.,Zabel H.
Abstract
ABSTRACTA 900A single crystalline GaAs film deposited by molecular beam epitaxy (MBE) on a silicon crystal cut 4.1° from (001) surface was characterized with X-ray diffraction measurements of the mosaic spread, particle size and strain distribution, and lattice parameter. The GaAs film had a larger mosaic spread in the direction of the steps of the silicon surface and coherent particle sizes of about 900 Å compared to the estimated film thickness of approximately 1000 Å. Superlattice reflections gave an ordered domain size of about 330 Å. There is a residual strain gradient in the film which is nearly linear with the lattice constant differing by about 0.044 Å between the surface of the film and its interface with the silicon substrate. Lattice parameter measurements indicate a small expansion of 0.13% perpendicular to the plane of the film.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献