Author:
Specht E. D.,Ice G. E.,Peters C. J.,Sparks C. J.,Lucas N.,Zhu X.-M.,Moret R.,Morkoc H.
Abstract
ABSTRACTBy measuring the intensity profiles along the crystal truncation rods of a Si(001) substrate, we obtain the depth sensitivity necessary for x-ray diffraction measurements of the structure of its interface with a thick GaAs overlayer which is epitaxial to, but not in registry with the substrate. By comparing the diffraction with a model based on a grid of misfit dislocations, we find that the atoms at the interface have a root mean square displacement of 1.09±0.1Å from this ideal structure, and that the interface has a roughness of 2.9±1 Å. The diffraction indicates an anomalously small strain perpendicular to the interface in the GaAs near the interface.
Publisher
Springer Science and Business Media LLC
Reference19 articles.
1. Crystal truncation rods and surface roughness
2. 14. Specht E. D. , Ice G. E. , Peters C. J. , Sparks C. J. , Lucas N. , Zhu X.-M. , Moret R. , and Morkog H , to be published.
3. X-ray interference method for studying interface structures
4. 19. Lucas N. , Zabel H. , lyer S. V. , and Morkoc H. , to be published.
5. Defect structures at the GaAs/Si interface after annealing