Author:
Hirose Masataka,Ogura Tsuyoshi
Abstract
AbstractA silicon surface exposed to NF3 gas was irradiated with an ArF excimer laser beam. The reaction products on the surface and their chemical bonding features were studied by in-situ x-ray photoelectron spectroscopy at each step of the photochemical etching. It was found that SiFX (1≤X≤4) units and molecular fluorine exist in the reacting surface region. The surface Si-Si bonds attacked with fluorine are progressively fluorinated and the final surface products are mainly SiF4 and SiF3. A possible mechanism of fluorine etching is discussed on the basis of a valence electron transfer (VET) model.
Publisher
Springer Science and Business Media LLC
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