Lomer Dislocations in (0 0 1) GaSb/GaAs Heterostructure.-Reference-Cited by-同舟云学术

Lomer Dislocations in (0 0 1) GaSb/GaAs Heterostructure.

Published:1991 Issue: Volume:238 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Rocherj André M.,Kang Joon M.,Ponchet Anne

Abstract

ABSTRACTThe (001) GaSb/GaAs heterostructure reveals a nearly complete relaxation of the misfit strain. This relaxation is connected to the highly regular network of Lomer dislocations which is a consequence of island growth conditions.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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