A transmission electron microscopy and reflection high‐energy electron diffraction study of the initial stages of the heteroepitaxial growth of InSb on GaAs (001) by molecular beam epitaxy-Reference-Cited by-同舟云学术

A transmission electron microscopy and reflection high‐energy electron diffraction study of the initial stages of the heteroepitaxial growth of InSb on GaAs (001) by molecular beam epitaxy

Published:1990-01-15 Issue:2 Volume:67 Page:800-806
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhang X.,Staton‐Bevan A. E.,Pashley D. W.,Parker S. D.,Droopad R.,Williams R. L.,Newman R. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.345735

Reference14 articles.

1. First stages of the MBE growth of InAs on (001)GaAs

2. The growth of GaAs on Si by MBE

3. Heteroepitaxial InSb Films Grown by Molecular Beam Epitaxy

4. Growth of Sb and InSb by molecular‐beam epitaxy

5. Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy

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