Author:
Ignat M.,Chouaf A.,Normandon Ph.
Abstract
ABSTRACTThe evolution of internal stresses in Tungsten films deposited on Silicon substrates submitted to external stresses is discussed here. The stresses are estimated and measured by theoretical and experimental methods. The discussion of the internal stress evolution is shown to be dependent of the film/substrate interfaces, and of the loss of adhesion inducing stress relaxation.
Publisher
Springer Science and Business Media LLC
Cited by
8 articles.
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