1. [15] Simpson T. W. , Goldberg R. D. , Mitchell I. V. , and Baribeau J.M. in Mat. Res. Soc. Symp. Proc. 438: Materials Modification and Synthesis by Ion Beam Processing, edited by D. E. Alexander, N. W. Cheung, B. Park, and W. Skorupa, 15 (1997)
2. T. W. Simpson, I. V. Mitchell, and J.M. Baribeau in Mat. Res. Soc. Symp. Proc. 469: Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, 277 (1997).
3. Implantation and transient B diffusion in Si: The source of the interstitials
4. [7] Cowern N. E. B. , Jos J. F. F. , Janssen K. T. F. , and Wachters A. J. H. in Mat. Res. Soc. Symp. Proc. 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, edited by D. J. Wolford, J. Bernholc, and E. E. Haller, 605 (1990).
5. Characterization of incomplete activation of high‐dose boron implants in silicon