Characterization of incomplete activation of high‐dose boron implants in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663519
Reference15 articles.
1. The isothermal annealing of boron implanted silicon
2. CHANNELING STUDY OF BORON‐IMPLANTED SILICON
3. THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON
4. Solid Solubility and Diffusion Coefficients of Boron in Silicon
5. The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon
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