Mechanisms of Transition-Element-Gettering in Silicon

Abstract

ABSTRACTThe unique properties of 3d-transition elements in silicon are reviewed that are essential for an understanding of gettering phenomena. Transition-element-gettering techniques are divided into two groups, depending on whether or not the dominant gettering mechanism operates during annealing or cooling down of silicon wafers. Experiments that identify the gettering mechanism are presented for oxygen precipitation-induced gettering (internal gettering) as well as phosphorus-diffusion gettering. It is concluded that only the latter technique operates during high-temperature treatment.