MeV-boron implanted layer, oxygen precipitates and poly-silicon back side combined in one silicon wafer: at what defect will Cu and Ni be gettered?
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Published:2002-04-01
Issue:4
Volume:74
Page:545-551
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ISSN:0947-8396
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Container-title:Applied Physics A: Materials Science & Processing
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language:
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Short-container-title:Applied Physics A: Materials Science & Processing
Author:
Hölzl R.,Fabry L.,Range K.-J.,Pech R.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Cited by
1 articles.
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