Author:
Kirillov Dimitry,Merz James L.
Abstract
ABSTRACTThe frequency of the phonon line in the Raman scattering spectrum recorded during CW laser-beam heating of Si was used as a characteristic of the lattice temperature inside the laser spot. It is shown that Raman scattering is a good temperature probe up to the laser power approaching optical damage of Si.
Publisher
Springer Science and Business Media LLC
Cited by
5 articles.
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