Raman scattering measurement of silicon‐on‐insulator substrates formed by high‐dose oxygen‐ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340467
Reference26 articles.
1. Total Dose Radiation-Bias Effects in Laser-Recrystallized SOI MOSFET's
2. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
3. Simox technology and its application to CMOS LSIS
4. Formation of Buried Oxide in Silicon by High-Dose Oxygen Implantation, and Application of this Technology to CMOS Devices
5. Radiation-hardenedn-channel MOSFET achieved by a combination of polysilicon sidewall and SIMOX technology
Cited by 46 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron paramagnetic resonance of VN–VGa complex in BGaN;APL Materials;2023-10-01
2. Role of ion beams and their energies in the properties of zinc tin phosphide thin films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-01
3. Bending deformation and self-restoration of submicron-sized graphite cantilevers;Acta Materialia;2022-12
4. Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis;Applied Surface Science;2021-02
5. Synthesis of silicon nanoparticles by laser ablation at low fluences in water and ethanol;Materials Research Express;2020-02-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3