Author:
Teichert G.,Schleicher L.,Knedlik Ch.,Voelskov M.,Skorupa W.,Yankov R.A.,Pezoldt J.
Abstract
AbstractPhotothermal methods provide a valuable complement to the destructive measurement techniques for the detection of the optimal process conditions in ion beam synthesis of wide band gap semiconductor compounds. In addition to their nondestructive and non contact qualities, they are highly sensitive to changes of thermophysical properties due to structural changes. Analyses have been carried out with (SiC)l-x(AIN)x compounds, formed by ion beam synthesis.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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