Photothermal reflectance investigation of implanted silicon: The influence of thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.113752
Reference18 articles.
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers;Journal of Applied Physics;2008-06-15
2. Optical and structural properties of implanted Si wafers: the effects of implantation energy and subsequent isochronal annealing temperature;Semiconductor Science and Technology;2006-06-28
3. Photomodulated thermoreflectance investigation at elevated temperatures: plasma versus thermal effect;Applied Physics Letters;2003-02-17
4. Transient reflecting grating spectroscopy for defect analysis in surface region of semiconductors;Review of Scientific Instruments;2003-01
5. Transient reflecting grating spectroscopy for defect analysis of surface region of semiconductors;Journal of Applied Physics;2002-08
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