Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2943268
Reference14 articles.
1. Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects
2. Electronic Defect and Contamination Monitoring in Si Wafers Using Spectrally Integrated Photocarrier Radiometry
3. Ion implant dose dependence of photocarrier radiometry at multiple excitation wavelengths
4. Three-layer photocarrier radiometry model of ion-implanted silicon wafers
5. H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry
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1. Lock-in carrierography of semiconductors and optoelectronics;Journal of Applied Physics;2022-04-21
2. Infrared radiation induced by photocarrier recombination in solar cells;J INFRARED MILLIM W;2014
3. Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers;International Journal of Thermophysics;2014-04-26
4. Analysis of Enhanced Photocarrier Radiometry Signals for Ion-Implanted and Annealed Silicon Wafers;International Journal of Thermophysics;2012-09-01
5. Photocarrier radiometry of ion-implanted and thermally annealed silicon wafers with multiple-wavelength excitations;Journal of Applied Physics;2012-05
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