Ion beam synthesis of 3C-(Si1-xC1-y)Gex+ysolid solutions-Reference-Cited by-同舟云学术

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Ion beam synthesis of 3C-(Si1-xC1-y)Gex+ysolid solutions

Published:2005-03 Issue:4 Volume:202 Page:545-549
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Weih P.,Stauden Th.,Ecke G.,Shokhovets S.,Zgheib Ch.,Voelskow M.,Skorupa W.,Ambacher O.,Pezoldt J.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Substitutional Ge in 3C–SiC

2. Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates

3. Role of Ge on film quality of SiC grown on Si

4. 3C‐SiC:Ge alloys grown on Si (111) substrates by SSMBE

5. Experimental study of Si substitution by Ge in Ge-alloyed SiC epitaxial growth on6H−SiC(0001)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solid phase epitaxial growth of 3C–SiC thin film on Si and annihilation of nanopores;Acta Materialia;2014-02

2. Structure and Lattice Location of Ge Implanted 4H-SiC;Materials Science Forum;2008-09

3. Ion beam synthesis of 4H-(Si1-xC1-y)Gex+ysolid solutions;physica status solidi (a);2007-04

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