3C‐SiC:Ge alloys grown on Si (111) substrates by SSMBE-Reference-Cited by-同舟云学术

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3C‐SiC:Ge alloys grown on Si (111) substrates by SSMBE

Published:2004-01-19 Issue:2 Volume:1 Page:347-350
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Weih P.¹,Cimalla V.¹,Stauden Th.¹,Kosiba R.¹,Ecke G.¹,Spiess L.¹,Romanus H.¹,Gubisch M.¹,Bock W.²,Freitag Th.³,Fricke P.³,Ambacher O.¹,Pezoldt J.¹

Affiliation:

1. Zentrum für Mikro‐ und Nanotechnologien, TU Ilmenau, PF100565, 98693 Ilmenau, Germany

2. Institut für Oberflächen und Schichtanalytik, Universität Kaiserslautern, Erwin‐Schrödinger Str., Gebäude 56, 67663 Kaiserslautern, Germany

3. SIMS‐Labor, Institut Fresenius, Zur Wetterwarte 10, Haus 107, 01109 Dresden, Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303953

Reference10 articles.

1. High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates

2. Full potential linearized augmented plane wave calculations of structural and electronic properties of GeC, SnC and GeSn

3. Electrical and optical properties of Ge–implanted 4H–SiC

4. Predictive study of thermodynamic properties of GeC

5. Energetics and electronic structure of the hypothetical cubic zincblende form of GeC

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning;Applied Physics Letters;2012-04-02

2. Structure and Lattice Location of Ge Implanted 4H-SiC;Materials Science Forum;2008-09

3. Atomic Layer Epitaxy of (Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC;Materials Science Forum;2006-10

4. Growth of 3C-(Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC by Molecular Beam Epitaxy;Materials Science Forum;2005-05

5. Ion beam synthesis of 3C-(Si1-xC1-y)Gex+ysolid solutions;physica status solidi (a);2005-03

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