A Mathematical Model of the Gas-Phase and Surface Chemistry in GaAs Mocvd-Reference-Cited by-同舟云学术

A Mathematical Model of the Gas-Phase and Surface Chemistry in GaAs Mocvd

Published:1989 Issue: Volume:145 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Coltrin Michael E.,Kee Robert J.

Abstract

AbstractThis paper presents a detailed mathematical model of the coupled gas-phase chem- istry, surface chemistry, and fluid mechanics in the MOCVD of GaAs from trimethylgallium and arsine in a rotating-disk reactor. The model predicts steady-state deposition rates as a function of susceptor temperature and partial pressure of the reactants. Rate constants in the model have been adjusted to match experimental deposition rates from the literature.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference20 articles.

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2. Equilibrium gas phase species for MOCVD of AlxGa1−xAs

3. 11. Creighton J. R. , private communication.

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