Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN-Reference-Cited by-同舟云学术

Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN

Published:2013-04-14 Issue:14 Volume:113 Page:144908
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhang Wei,Liu Peichi,Jackson Biyun,Sun Tianshu,Huang Shyh-Jer,Hsu Hsiao-Chiu,Su Yan-Kuin,Chang Shoou-Jinn,Li Lei,Li Ding,Wang Lei,Hu XiaoDong,Xie Y. H.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4799600

Reference44 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Solid-State Light Sources Getting Smart

3. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

4. Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature

5. AlGaN/GaN HEMTs-an overview of device operation and applications

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