Characterization of Vacancy-Type Defects in Ion Implanted and Annealed SiC by Positron Annihilation Spectroscopy

Author:

Anwand W.,Brauer G.,Coleman P. G.,Skorupa W.

Abstract

ABSTRACTNew examples of characterization of vacancy-type defects in ion implanted and annealed SiC by the established technique of slow positron implantation spectroscopy are presented. In particular, the estimation of the depths of damaged regions and their change (a) after post-irradiation annealing, or (b) due to variation of substrate temperature during implantation, is addressed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference10 articles.

1. Interaction of positron beams with surfaces, thin films, and interfaces

2. 9. Brauer G. , Anwand W. , Coleman P.G. , Störmer J. , Plazaola F. , Campillo J.M. , Pacaud Y. and Skorupa W. , J. Phys.: Condens. Matter (in press)

3. 6. Wirth H. , Anwand W. , Brauer G. , Coleman P.G. , Voelskow M. , Panknin D. and W. Skorupa, Proc. of the International Conference on Silicon Carbide, III-nitrides and Related Materials, Stockholm, 1997, (in press)

4. Evaluation of some basic positron-related characteristics of SiC

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