Author:
Roth J. A.,Lyon T. J. De,Adel M. E.
Abstract
AbstractThe use of band-edge reflection spectroscopy (BRS) to determine the substrate temperature during MBE is reviewed. Data are presented for Si, GaAs, InP and CdZnTe substrates, and the use of BRS during the growth of ZnTe on Si is demonstrated. We discuss complications that arise due to optical interference in the epitaxial layers, and methods to compensate for the effects of interference are described.
Publisher
Springer Science and Business Media LLC
Reference7 articles.
1. A new optical temperature measurement technique for semiconductor substrates in molecular beam epitaxy
2. The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaP
3. Infra-red transmission spectroscopy of GaAs during molecular beam epitaxy
4. Temperature Dependence of the Energy Gap in GaAs and GaP
5. 4. Powell R. A. and Kirillov D. , MIMIC Phase III Contract No. DAALO1-89-C-0907, January 1991; D. Kirillov and R. A. Powell, U. S. Patent No. 5,118,200, June 2, 1992.
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献