In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe-Reference-Cited by-同舟云学术

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In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe

Published:2022-12 Issue: Volume:599 Page:126898
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Shvets V.A.,Marin D.V.,Azarov I.A.,Yakushev M.V.,Rykhlitskii S.V.

Funder

Ministério da Ciência, Tecnologia e Inovação

Ministry of Education and Science of the Russian Federation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. J.W. Garland, S. Sivananthan, Molecular-beam epitaxial growth of HgCdTe, in: G. Dhanaraj, K. Byrappa, V. Prasad, M. Dudley (Eds.), Springer Handbook of Crystal Growth, Springer, 2010, pp. 1069–1132, doi: 10.1007/978-3-540-74761-1.

2. J. Garland, MBE growth of mercury cadmium telluride, in: P. Capper, J. Garland (Eds), Mercury Cadmium Telluride: Growth, Properties and Applications, Wiley, Hoboken, 2011, pp. 131–150, doi: 10.1002/9780470669464.ch7.

3. In situ substrate temperature measurement during MBE by band-edge reflection spectroscopy;Roth;Mater. Res. Soc. Symp. Proc.,1994

4. Integrated multi-sensor control of II-VI MBE for growth of complex IR detector structures;Jensen;J. Electron. Mater.,1998

5. G.L. Olson, J.A. Roth, P.D. Brewer, R.D. Rajavel, D.M. Jamba, J.E. Jensen, B. Johs, Integrated multi-sensor system for real-time monitoring and control of HgCdTe MBE, J. Electron. Mater. 28 (1999) 749–755, doi: 10.1007/s11664-999-0065-3.

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