Growth of Gaas on Si Using Algap Intermediate Layer-Reference-Cited by-同舟云学术

Growth of Gaas on Si Using Algap Intermediate Layer

Published:1989 Issue: Volume:148 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Noto N.,Nozaki S.,Egawa T.,Soga T.,Jimbo T.,Umeno K.

Abstract

ABSTRACTWe have studied heteroepitaxial growth of GaAs on Si using an AlxGa1−xP intermediate layer in an atmospheric-pressure metal organic chemical vapor deposition (NOCVD) reactor. The crystallinity of the GaAs layer depends on AlP composition(x) of the intermediate layer. The bett crystal quality of GaAs layer is obtained when the AlP composition(x) of the intermediate layer is close to 0.5. The X-ray FWHX of 180 arcs and the etch pit density (EPD) of 2.5 × 107cm−2 were obtained in this GaAs/AlGaP/Si structure.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference7 articles.

1. MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers

2. Effectiveness of AlGaAs/GaAs superlattices in reducing dislocation density in GaAs on Si

3. Six-Inch Diameter GaAs on Si Wafers

4. Defect reduction effects in GaAs on Si substrates by thermal annealing

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