Author:
Salerno Jack P.,Hill D. S.,Lee J. W.,McCullough R. E.,Fan John C. C.
Abstract
AbstractThe growth of high-quality single crystal GaAs on Si wafers up to six inches in diameter by organometallic chemical vapor deposition (OMCVD) is reported. These wafers have specular surfaces, excellent thickness uniformity, and are shown to have properties comparable to those of smaller diameter GaAs on Si wafers. The mechanical and electrical properties of the six inch GaAs on Si wafers are shown to be suitable for GaAs device fabrication.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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