Low Damage Magnetron Reactive Ion Etching of GaAs

Abstract

ABSTRACTMagnetron reactive ion etching is an attractive alternative to reactive ion etching since it has the potential for producing minimal surface damage while still retaining the advantages of reactive ion etching. We report here the results of a study of GaAs magnetron ion etching using Freon-12 and silicon tetrachloride etch gases. Differences are found in etch profiles and surface region characteristics of GaAs samples etched by the two gases. The relevant mechanisms are discussed.