Study of electrical damage in GaAs induced by SiCl4reactive ion etching
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350314
Reference11 articles.
1. Temperature dependence of reactive ion etching of GaAs with CCl2F2:O2
2. The effect of sputter cleaning on Au/GaAs contacts and the role of doping
3. Effect of ion sputtering on interface chemistry and electrical properties of Au GaAs(100) Schottky contacts
4. Effect of ion sputtering on interface chemistry and electrical properties of Au GaAs(100) Schottky contacts
5. Dry etching of III–V semiconductors: influence of substrate temperature on the anisotropy and induced damage
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