High-Performance Structure of Light-Emitting Diode for GaAs on Si Tetsuroh Minemura

Abstract

ABSTRACTThe Light-emitting diode (LED) structures have been investigated to realize high-performance LEDs on Si substrates. The light intensity of the LEDs with p-GaAs / n-GaAs / Si structures, which was effected from thickness of the p-GaAs layer, was only about 55% of the homoepitaxialLED. The light intensity of the LED with an n-GaAs/p-GaAs/Si structure, however, was about four times stronger than those of p-GaAs/n-GaAs/Si structures. After continuous operation for two hours, the intensity still kept much stronger than those of the LEDs with p-GaAs / n-GaAs / Si structures, although it decreased to 15% of the homoepitaxial LED.