Simulation of a-Si:H Color Sensors for Application in Intelligent Sensor Systems

Abstract

Amorphous silicon based n-i-p-i-n structures may be used as color detectors. A simulation program has been developed which allows the examination of the spatial distribution of carrier concentrations, electric field and current densities under different illumination conditions. Furthermore current/voltage- and monochromatic response curves are presented. The results of the simulation point out that the defect density in the p-layer has a major influence on device performance.