Author:
Rieve Peter,Giehl Jürgen,Zhu Qi,Böhm Markus
Abstract
AbstractA novel two terminal thin film photo diode for color detection has been developed. The device structure which is based on standard amorphous silicon nipin multilayers exhibits three or even more linearly independent spectral sensitivity peaks and provides linearity over a wide range of illumination levels. Band gap engineering and electric field tailoring allow a precise voltage controlled shift of the collection region of photo generated carriers. The steady-state as well as the transient device characteristics have been studied in detail. Emphasis was put on optimization of the spectral sensitivity of the color diodes. Furthermore, an electronic color correction algorithm is presented which results in an improved color separation.
Publisher
Springer Science and Business Media LLC
Reference13 articles.
1. Optimization criteria for a-Si:H nipin color sensors
2. 13. Giehl J. , Zhu Q. , Rieve P. and Bohm M. , this conference.
3. Simulation of a-Si:H Color Sensors for Application in Intelligent Sensor Systems
4. 1. Schulte J. , Fischer H. , Lulé T. , Zhu Q. , Böhm M. , Proceedings of Micro System Technologies 94, VDE-Verlag, Berlin, 783 (1994).
5. New Bias-Controlled Three-Color Detectors using Stacked a-SiC:H/a-Si:H Heterostructures
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献