Transient Forward Bias Response of Amorphous Silicon P-I-N Diodes

Abstract

ABSTRACTWhen a forward bias is applied to an amorphous silicon p-i-n diode, there is a delay in the onset of the current. We present experimental data and numerical calculations, showing that the effect is due to trapped space charge which inhibits the onset of a double injection current. The dependence of the delay time on defect density, bias, illumination and the location of the defects is examined.