Defect Creation by Forward Bias in Amorphous Silicon P-I-N Diodes

Abstract

ABSTRACTMetastable defects are induced in a-Si:H p-i-n devices by a forward bias current. The defect density increases approximately as the square root of time, reaching saturation at long inducing times, and with a weak temperature dependence. Current-induced defect annihilation is observed, in which the current causes a reduction in the previously induced defect density. Calculations of the changes in the forward bias current for different bulk defect densities are able to account for the measured results.