Transient Simulations of Amorphous Silicon Devices

Abstract

ABSTRACTWe have developed a numerical simulation program (MANIFEST) which calculates the time-dependent behaviour of one and two dimensional amorphous silicon devices. Our model solves the complete set of transport equations for both electrons and holes and fully includes the appropriate time dependent occupation functions for the traps in the band gap of the amorphous silicon. These traps are assumed to obey Shockiey-Read-Hall kinetics. We have simulated the transient behaviour of pin and nin diodes, both in the dark and under illumination, as well as the characteristics of thin film transistors. Our initial results are in good agreement with experimental data.