Author:
Piotrowski T.T.,Piotrowska A.,Kaminska E.,Golaszewska K.,Papis E,Piskorski M,Jung W,Katcki J,Kudla A.,Adamczewska J.,Piotrowski J.,Nowak Z.,Orman Z.,Pawluczyk J.
Abstract
AbstractThis paper reports on the design and fabrication of GaSb/n-InxGal1−xAsySb1−y/p-AlxGal−xAsySb1−y heterojuction photodetectors operating in the 2 - 2.4 µm wavelength region. Device structures were grown by LPE and fabricated as mesa-type diodes by RIE etching in CC14/H2 plasma. For mesa passivation a surface treatment in (NH42S water solution was carried out. The photodiodes structures are characterized by differential resistance RoA=400 ωcm2. Measured detectivity is in the range 3.1010 - 2. 1011 cmHz1/2/W, in dependence on the active area and cutoff wavelength.
Publisher
Springer Science and Business Media LLC
Cited by
5 articles.
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