Author:
Piotrowska A.,Papis E.,Golaszewska K.,Lukasiewicz R.,Kaminska E.,Piotrowski T. T.,Kruszka R.,Kudla A.,Rutkowski J.,Szade J.,Winiarski A.,Wawro A.,Aleszkiewicz M.
Abstract
ABSTRACTSulfur passivation effects on the performance of LPE-grown GaSb/InGaAsSb/AlGaAsSb mesatype photodiodes operating in wavelengths range 1.9 – 2.3 μm have been investigated. (NH4)2S, Na2S, and (NH2)2CS have been chosen as sulfur sources in either aqueous or C3H7OH solutions. Electrochemical passivation of mesa side walls was proven to reduce photodiodes dark current and increasing their differential resistance by a factor of 4. As a result devices characterized by the detectivity of 1.5–2×1010 cmHz1/2/W and dark current density of 20 mA/cm2 at –0.5V bias have been fabricated and their long-term stability has been proven.
Publisher
Springer Science and Business Media LLC
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