The effects of (NH4)2S passivation treatments on the dark current–voltage characteristics of InGaAsSb PIN detectors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Molecular beam epitaxial growth, characterization and performance of high-detectivity GaInAsSb/GaSb PIN detectors operating at 2.0 to 2.6 μm
2. Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy
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