Molecular beam epitaxial growth, characterization and performance of high-detectivity GaInAsSb/GaSb PIN detectors operating at 2.0 to 2.6 μm
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
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4. Optical Properties of MBE-Grown Gainassb
5. Band Gap Energy and Its Temperature Dependence of GaInAsSb Quaternary Alloy Grown by Molecular Beam Epitaxy
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