Author:
Vasquez Barbara,David Theodore N.
Abstract
ABSTRACTPoly-buffered local-oxidation of silicon + trench-isolation (PBLT) is a technique being explored for device isolation. In an earlier study, we had reported the presence of dislocations associated with a combination of high-dose (∼5E14 cm2) phosphorous implants and PBLT isolation. In the present study, the behavior of extended defects present in the structures is analyzed in greater detail. The origin and behavior of the defects is modelled to explore potential mechanisms to explain the observations. Implantation induced dislocation-loops interact with stress fields associated with PBLT isolation-trenches. Some of the implant loops (in the presence of a stress field) transform to dislocation sources which then create glide dislocations in the structures. Strategies for defect engineering are discussed, including reducing implant-induced damage (lowering the implant dose) or reducing stress fields (by moving the edge of the implanted region away from the trench). Defect densities can be reduced or eliminated.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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