Total Dielectric Isolation (TDI) of Device Islands Using SIMOX/SOI Technology

Abstract

AbstractA method of achieving total dielectric isolation (TDI) of device islands (or larger areas) using ion beam synthesis to form a continuous but non planar layer of SiO2is described. The technique involves implantation through a patterned masking layer in which windows have been opened to define the dimensions and location of the islands. TDI structures have been successfully formed in annealed (1300°C, 5 hours) wafers implanted with a dose of 2.2 x 1018O+cm2at 200 keV, using a thermal oxide mask of thickness 4750 Å.