Dislocation Reduction on Simox Substrates by Using Multiple Implants

Abstract

AbstractA technique for dislocation density reduction in SIMOX (Separation by IMplantation of OXygen) substrates by using multiple implant and anneal cycles is described. This scheme produces SIMOX material with dislocation defect densities less than 1 x 105/cm2. This dislocation density value is three to four orders of magnitude lower than that of comparable single implant slices having the same total dose and anneal conditions.