A novel appproach to secondary defect reduction in separation by implantation of oxygen material
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355783
Reference17 articles.
1. Low Dislocation Soi by Oxygen Implantation
2. Dislocation Reduction on Simox Substrates by Using Multiple Implants
3. Reduced defect density in silicon‐on‐insulator structures formed by oxygen implantation in two steps
4. Buried SiO2layer formation in Si with an MeV O ion beam
5. Reduction of secondary defects in MeV ion‐implanted silicon by means of ion beam defect engineering
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion-Beam Modification of Semiconductors and Related Electronic Materials;Materials Science Forum;1997-05
2. Ion beam defect engineering in semiconductors and optoelectric materials;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-07
3. Strain reduction in the Si overlayer for improved SIMOX material;Materials Science and Engineering: B;1995-01
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