Cavity Formation in Simox Structures-Reference-Cited by-同舟云学术

Cavity Formation in Simox Structures

Published:1987 Issue: Volume:107 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

El-Ghor M. K.,Pennycook S. J.,Sjoreen T. P.,White C. W.,Narayan J.

Abstract

AbstractWe have investigated the effect of different implantation parameters on cavity formation in the top Si layer in SIMOX structures. Cavities were found to occur in the temperature range between 600 and 675°C. The nucleation and growth kinetics of cavities could be reasonably explained using classical theory, and showed a behavior similar to that of irradiation-induced voids in metals. A similar dependence on instantaneous current and beam scanning frequency was also observed. Post implantation annealing at a temperature of 1150°C for 80 min showed cavities starting to facet, and a threading dislocation density of < 105 cm2. SIMOX structures formed in (111) silicon are also presented.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference14 articles.

1. High quality Si‐on‐SiO2films by large dose oxygen implantation and lamp annealing

2. Microstructure of high‐temperature annealed buried oxide silicon‐on‐insulator

3. High‐temperature annealing of implanted buried oxide in silicon

4. High-Quality SOI by Oxygen Implantation into Silicon

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Implantation of si under extreme conditions: The effects of high temperature and dose on damage accumulation;Journal of Electronic Materials;1996-01

2. Implantation-induced defects in high-dose O-implanted Si;Ion Beam Modification of Materials;1996

3. Defect formation in high dose oxygen implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04

4. Defect formation in high dose oxygen implanted silicon;Ion Implantation Technology–92;1993

5. Low‐dislocation‐density silicon‐on‐insulator material produced by sequential oxygen implantation and low‐temperature annealing;Applied Physics Letters;1992-06-22